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Please support us at: https://www.patreon.com/garguniversity A p--n junction is a boundary or interface between two types of semiconductor material, p-type and n-type, inside a single crystal of semiconductor. It is created by doping, for example by ion implantation, diffusion of dopants, or by epitaxy (growing a layer of crystal doped with one type of dopant on top of a layer of crystal doped with another type of dopant). If two separate pieces of material were used, this would introduce a grain boundary between the semiconductors that severely inhibits its utility by scattering the electrons and holes. p--n junctions are elementary "building blocks" of most semiconductor electronic devices such as diodes, transistors, solar cells, LEDs, and integrated circuits; they are the active sites where the electronic action of the device takes place. For example, a common type of transistor, the bipolar junction transistor, consists of two p--n junctions in series, in the form n--p--n or p--n--p. The discovery of the p--n junction is usually attributed to American physicist Russell Ohl of Bell Laboratories. A Schottky junction is a special case of a p--n junction, where metal serves the role of the p-type semiconductor. http://www.garguniversity.com Check out Ebook "Mind Math" from Dr. Garg https://www.amazon.com/MIND-MATH-Learn-Math-Fun-ebook/dp/B017QEIF18
