Buy Dideo Subscription
This is an audio version of the Wikipedia Article: https://en.wikipedia.org/wiki/Carbon_nanotube_field-effect_transistor 00:00:32 1 Introduction and background 00:02:02 2 Electronic structure of carbon nanotubes 00:04:57 3 Motivations for transistor applications 00:06:39 4 Device fabrication 00:08:24 4.1 Back-gated CNTFETs 00:08:45 4.2 Top-gated CNTFETs 00:10:46 4.3 Wrap-around gate CNTFETs 00:12:48 4.4 Suspended CNTFETs 00:14:14 4.5 CNTFET material considerations 00:16:01 5 I–V characteristics 00:17:01 5.1 Theoretical derivation of drain current 00:19:37 6 Key advantages 00:29:46 7 Comparison to MOSFETs 00:30:19 8 Heat dissipation 00:32:14 9 Disadvantages 00:33:24 9.1 Lifetime (degradation) 00:33:34 9.2 Reliability 00:34:00 9.3 Difficulties in mass production, production cost 00:35:28 10 Future work 00:36:12 11 References Listening is a more natural way of learning, when compared to reading. Written language only began at around 3200 BC, but spoken language has existed long ago. Learning by listening is a great way to: - increases imagination and understanding - improves your listening skills - improves your own spoken accent - learn while on the move - reduce eye strain Now learn the vast amount of general knowledge available on Wikipedia through audio (audio article). You could even learn subconsciously by playing the audio while you are sleeping! If you are planning to listen a lot, you could try using a bone conduction headphone, or a standard speaker instead of an earphone. Listen on Google Assistant through Extra Audio: https://assistant.google.com/services/invoke/uid/0000001a130b3f91 Other Wikipedia audio articles at: https://www.youtube.com/results?search_query=wikipedia+tts Upload your own Wikipedia articles through: https://github.com/nodef/wikipedia-tts Speaking Rate: 0.727461282746446 Voice name: en-US-Wavenet-A "I cannot teach anybody anything, I can only make them think." - Socrates SUMMARY ======= A carbon nanotube field-effect transistor (CNTFET) refers to a field-effect transistor that utilizes a single carbon nanotube or an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure. First demonstrated in 1998, there have been major developments in CNTFETs since.
